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What is gate induced barrier lowering effect?
Anonymous
It also can be confused with "Gate-Induced Drain Leakage", wich is different from DIBL. Due to the high e-field on Gate-Drain interface during off-state (with D-S bias), e-h pairs can be formed through tunneling. Each of them goes to the drain or channel and induces drain current. Please see : http://nanohub.org/resources/5690/download/2008.10.28-ece612-l16.pdf
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