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SiGe strained channel and silicided contact integration at 28nm demands wet etch and clean chemistries that operate at nanometer precision: removing exactly the right material, at exactly the right selectivity, without disturbing adjacent films or device structures. At LFAB, these processes don’t yet exist in production form. You will build them. As a Wet Process Development Engineer in TI’s ATD organization in Lehi, you will own the development, integration, and qualification of wet etch and clean modules for the 28nm SiGe and silicidation device flows which which directly enabling LFAB’s technology ramp from development to high-volume manufacturing. Your work spans the full arc from chemistry formulation through module integration, yield analysis, and production readiness. The wet process modules you develop will run on every wafer at LFAB.

Responsibilities include:

• Module Integration: Develop and optimize wet process flows for SiGe epi-layer cleaning and selective removal without damage to underlying Si or gate oxide
• Selective Etching: Define chemistries for high-precision isotropic and anisotropic etching with focus on SiGe/Si/silicided film selectivity and undercut control at 28nm geometries
• Yield & Defectivity: Identify root causes of process-related defects using FMEA and 8D methodologies; implement Statistical Process Control (SPC) to support the 28nm yield ramp toward high-volume manufacturing
• Cross-Functional Collaboration: Partner with Epi, Lithography, Spacer Films, and CMP teams to ensure seamless integration of wet modules into the full 28nm SiGe and silicidation fabrication flow

• Metrology & Characterization: Utilize SEM, TEM, ellipsometry, and AFM to characterize surface roughness and etch profiles at atomic resolution

  
  

  This role requires the ability to manage multiple parallel workstreams under schedule pressure, lead technical discussions with authority, communicate status and risks clearly, and drive alignment across organizational boundaries in a fast-paced technology development environment.

Minimum requirements:

• Master’s or Ph.D. in Materials Science, Chemical Engineering, Electrical Engineering, Physics, or related field
• 5+ years in R&D semiconductor wafer fabrication for advanced nodes (28nm or below)
• Technical depth in:
  • SiGe device physics, surface preparation, and chemical reaction kinetics
  • Wet etch chemistries across a broad range of film types
  • Hands-on experience with single-wafer or batch wet process tools (LAM, TEL, SCREEN, or equivalent)
  • Design of Experiments (DOE) methodology
  • Leading cross-functional teams from concept to production-ready status
  
  

Preferred qualifications:

• Experience developing new wet process modules from the ground up
• Strong inline-to-end-of-line signal correlation and process characterization skills
• Ability to build and maintain stakeholder relationships across internal and external partners
• Strong verbal and written communication skills
• Demonstrated ability to ramp quickly on new systems and processes